LF LSNA Library

Presentations

• On-Wafer LSNA Measurements Including Dynamic-Bias
  Gustavo Avolio, Guillaume Pailloncy, Dominique Schreurs, Marc Vanden Bossche, and Bart Nauwelaers
  17th European Microwave Week 2009 (EuMW 2009), September 28th - October 2nd 2009, Rome, Italy
  A novel set-up extending Large Signal Network Analyzer (LSNA) capabilities is described in this work. The new set-up allows the simultaneous on-wafer measurement of highfrequency response (600 MHz-50 GHz) and currents/voltages induced at low-frequency scale (10 kHz-24 MHz) when the nonlinear DUT is excited by a periodic modulated signal. Experiments carried out on FinFET devices are reported. It will be shown that, in certain conditions, the contribution of low-frequency information cannot be disregarded as it causes a significant discrepancy to appear in the current/voltage at the DUT terminals.
  (pdf - 600 KB)
  ... an accompanied article can be found in the articles section.
• Simultaneous measurement of high and low frequency response of non-linear microwave circuits
  Gustavo Avolio, Guillaume Pailloncy, Dominique Schreurs, Marc Vanden Bossche, and Bart Nauwelaers
  72nd ARFTG Microwave Measurement Conference, December 2008, Portland, Oregon, USA
  In this work, measurements of the high frequency as well as the low frequency response of a non-linear microwave circuit are reported. The developed set-up is based on an extension of the LSNA and it enables the simultaneous measurement of baseband response and RF behaviour. Thanks to this capability a direct correlation between the variation of baseband impedance and asymmetry of distortion components around the fundamental carrier is possible. Experimental results of two-tone measurements, carried out on a hybrid GaAs microwave circuit, are shown.
  (pdf - 638 KB)
  ... an accompanied article can be found in the articles section.
• Complete characterisation of LF and RF dynamics at device terminals within microwave circuits
  Gustavo Avolio, Dominique Schreurs, Bart Nauwelaers, Guillaume Pailloncy, and Marc Vanden Bossche
  Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop 2008, November 2008, Málaga, Spain.
  This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
  (pdf - 980 KB)
  ... an accompanied article can be found in the articles section.

Articles

• On-Wafer LSNA Measurements Including Dynamic-Bias
  Gustavo Avolio, Guillaume Pailloncy, Dominique Schreurs, Marc Vanden Bossche, and Bart Nauwelaers
  17th European Microwave Week 2009 (EuMW 2009), September 28th - October 2nd 2009, Rome, Italy
  A novel set-up extending Large Signal Network Analyzer (LSNA) capabilities is described in this work. The new set-up allows the simultaneous on-wafer measurement of highfrequency response (600 MHz-50 GHz) and currents/voltages induced at low-frequency scale (10 kHz-24 MHz) when the nonlinear DUT is excited by a periodic modulated signal. Experiments carried out on FinFET devices are reported. It will be shown that, in certain conditions, the contribution of low-frequency information cannot be disregarded as it causes a significant discrepancy to appear in the current/voltage at the DUT terminals.
  (pdf - 282 KB)
  ... an accompanied presentation can be found in the presentations section.
• Simultaneous measurement of high and low frequency response of non-linear microwave circuits
  Gustavo Avolio, Guillaume Pailloncy, Dominique Schreurs, Marc Vanden Bossche, and Bart Nauwelaers
  72nd ARFTG Microwave Measurement Conference, December 2008, Portland, Oregon, USA
  In this work, measurements of the high frequency as well as the low frequency response of a non-linear microwave circuit are reported. The developed set-up is based on an extension of the LSNA and it enables the simultaneous measurement of baseband response and RF behaviour. Thanks to this capability a direct correlation between the variation of baseband impedance and asymmetry of distortion components around the fundamental carrier is possible. Experimental results of two-tone measurements, carried out on a hybrid GaAs microwave circuit, are shown.
  (pdf - 477 KB)
  ... an accompanied presentation can be found in the presentations section.
• Complete characterisation of LF and RF dynamics at device terminals within microwave circuits
  Gustavo Avolio, Dominique Schreurs, Bart Nauwelaers, Guillaume Pailloncy, and Marc Vanden Bossche
  Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop 2008, November 2008, Málaga, Spain.
  This work presents a way to determine the complete response, encompassing both the low- and high-frequency components, at the device terminals within a microwave circuit. The measurement set-up is based on an extension of the large-signal network analyser. Experimental results on a GaAs power amplifier are analysed.
  (pdf - 514 KB)
  ... an accompanied presentation can be found in the presentations section.